Spontaneous Raman scattering in ultrasmall silicon waveguides

被引：42

作者：

Dadap, JI ^{[1
]}

Espinola, RL

Osgood, RM

McNab, SJ

Vlasov, YA

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

OPTICS LETTERS | 2004年 / 29卷 / 23期

关键词：

D O I：

10.1364/OL.29.002755

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-mum(2) cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown. (C) 2004 Optical Society of America.

引用

页码：2755 / 2757

页数：3

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