Synthesis and characterization of ZnSe1-xTex thin films

被引:2
作者
Yadav, Brijesh Kumar [1 ]
Singh, Pratima [1 ]
Yadav, Chandreshvar Prasad [2 ]
Pandey, Dharmendra Kumar [2 ]
机构
[1] PG Coll, Dept Phys, Kanpur, Uttar Pradesh, India
[2] PPN PG Coll, Dept Phys, Kanpur, Uttar Pradesh, India
关键词
Thin films; XRD; SEM; UV-Visible-NIR; Raman spectroscopy; OPTICAL-PROPERTIES; PHYSICAL-PROPERTIES; RF;
D O I
10.1080/01411594.2021.1932884
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The present work includes the synthesis of zinc selenium telluride ZnSe1-xTex x (0 <= x <= 1) ternary compound and its deposition in the form of thin films having thickness 200nm using thermal evaporation technique under high vacuum. The synthesized material ZnSe1-xTex thin films are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-VIS-NIR, and Raman spectroscopic measurements. The structural measurements reveal that the deposited thin films of ZnSe1-xTex material are polycrystalline, whose crystallinity decreases with concentration of tellurium material in thin films. The morphology measurement of films shows that the surface of films is smooth and particles are approximately spherical. The optical band gap estimated from the optical transmission spectra of the films is found to decrease with tellurium concentration. Peak shift is found towards red region with tellurium concentration in the films in Raman spectroscopic measurements. The obtained results are analyzed for application of ZnSe(1-x)Te(x )thin films.
引用
收藏
页码:326 / 337
页数:12
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