Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

被引：3

作者：

Lee, Kuan-Wei ^{[1
]}

Lin, Hsien-Cheng ^{[2
]}

Lee, Fang-Ming ^{[2
]}

Huang, Hou-Kuei ^{[2
]}

Wang, Yeong-Her ^{[2
]}

机构：

[1] I Shou Univ, Dept Elect Engn, Dashu 840, Kaohsiung Cty, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 701, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

aluminium compounds; gallium arsenide; high electron mobility transistors; III-V semiconductors; impact ionisation; indium compounds; leakage currents; MOSFET; semiconductor device noise; surface recombination; HEMTS; OXIDATION; BREAKDOWN; STATE;

D O I：

10.1063/1.3430569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) with an oxide grown by liquid phase oxidation on the InGaAs capping layer without a gate recess exhibits a lower leakage current density with suppressed impact ionization, better microwave characteristics, and improved high frequency noise performance compared to the conventional MHEMT with a recessed gate. The improved high frequency performance is due to the lower gate-source and gate-drain capacitances of the InAlAs/InGaAs MOS-MHEMT. Reduced surface recombination and impact ionization may also contribute to the improved frequency response, noise performance, and associated gain. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430569]

引用

页数：3