Design of LNA at 2.4 GHz using 0.25 μm CMOS technology

被引：5
|
作者：
Yang, XM [1 ]
Wu, TX
McMacken, J
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
[2] Agere Syst Inc, Orlando, FL 32819 USA
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 36卷 / 04期
关键词：
low noise amplifier; inductance enhancement;
D O I：
10.1002/mop.10740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two 2.4-GHz fully integrated CMOS low-noise amplifiers (LNA) have been designed in a 0.25-mum CMOS proceeds. Design procedure and simulation results are presented in this paper. In the design of differential LNA, a novel idea is proposed so that the die area can be greatly reduced, (C) 2003 Wile Periodicals. Inc.
引用
收藏
页码：270 / 275
页数：6
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