Frequency Dependent Electrical Characteristics of Au/n-Si/CuPc/Au Heterojunction

被引：13

作者：

Ahmad, Z. ^{[1
]}

Sayyad, M. H. ^{[1
]}

Karmov, Kh S. ^{[1
]}

Saleem, M. ^{[1
]}

Shah, M. ^{[1
]}

机构：

[1] Ghulam Ishag Khan Inst Engn Sci & Technol, Topi 23640, Nwfp, Pakistan

来源：

ACTA PHYSICA POLONICA A | 2010年 / 117卷 / 03期

关键词：

INTERFACE-STATE DENSITY; SPRAY DEPOSITION METHOD; SERIES RESISTANCE; ENERGY-DISTRIBUTION; V CHARACTERISTICS; SCHOTTKY DIODES; CURRENT-VOLTAGE; TEMPERATURE; SUBSTRATE; FILMS;

D O I：

10.12693/APhysPolA.117.493

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (C) and series resistance (R-s) interface states (D-it) of the junction. Measured capacitance and conductance were corrected for R-s. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 10(12) cm(-2) eV(-1).

引用

页码：493 / 496

页数：4

共 26 条

[1] Temperature-dependent I-V characteristics of organic-inorganic heterojunction diodes [J].

Ahmed, MM ;

Karimov, KS ;

Moiz, SA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (01) :121-126

[2]

[Anonymous], APPL PHYS LET

[3]

[Anonymous], 1978, Metal-Semiconductors Contacts

[4] Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods [J].

Aydin, Mehmet Enver ;

Yakuphanoglu, Fahrettin ;

Eom, Jae-Hoon ;

Hwang, Do-Hoon .

PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) :239-244

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[6] Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy [J].

Cova, P ;

Singh, A ;

Medina, A ;

Masut, RA .

SOLID-STATE ELECTRONICS, 1998, 42 (04) :477-485

[7] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[8] Correlated structural and electrical properties of thin manganese oxide films [J].

Dakhel, AA .

THIN SOLID FILMS, 2006, 496 (02) :353-359

[9]

Darwish S., 2003, Egyptian Journal of Solids, V26, P55

[10] High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures [J].

Fernandez, J ;

Godignon, P ;

Berberich, S ;

Rebollo, J ;

Brezeanu, G ;

Millan, J .

SOLID-STATE ELECTRONICS, 1996, 39 (09) :1359-1364

← 1 2 3 →