α-Sn pseudomorphic growth on InSb (111) and ((111))under-bar surfaces:: a high-resolution photoemission study

被引：19
作者：
Fantini, P
Gardonio, S
Barbieri, P
del Pennino, U
Mariani, C
Betti, MG
Magnano, E
Pivetta, M
Sancrotti, M
机构：
[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy
[2] Univ Rome La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy
[3] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[4] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
来源：
SURFACE SCIENCE | 2000年 / 463卷 / 03期
关键词：
epitaxy; growth; indium antimonide; metal-semiconductor interfaces; photoelectron spectroscopy; surface chemical reaction; surface electronic phenomena (work function; surface potential; surface states; etc.); tin;
D O I：
10.1016/S0039-6028(00)00564-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The Sn-InSb interface and alpha-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality alpha-Sn(111)-(1 x 1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates. (C) 2000 Elsevier Science B,V. All rights reserved.
引用
收藏
页码：174 / 182
页数：9
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