α-Sn pseudomorphic growth on InSb (111) and ((111))under-bar surfaces:: a high-resolution photoemission study

被引：19
作者：
Fantini, P
Gardonio, S
Barbieri, P
del Pennino, U
Mariani, C
Betti, MG
Magnano, E
Pivetta, M
Sancrotti, M
机构：
[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy
[2] Univ Rome La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy
[3] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[4] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
来源：
SURFACE SCIENCE | 2000年 / 463卷 / 03期
关键词：
epitaxy; growth; indium antimonide; metal-semiconductor interfaces; photoelectron spectroscopy; surface chemical reaction; surface electronic phenomena (work function; surface potential; surface states; etc.); tin;
D O I：
10.1016/S0039-6028(00)00564-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The Sn-InSb interface and alpha-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality alpha-Sn(111)-(1 x 1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates. (C) 2000 Elsevier Science B,V. All rights reserved.
引用
收藏
页码：174 / 182
页数：9
相关论文
共 22 条
[1]   Density of states of a two-dimensional electron gas measured by high-resolution photoelectron spectroscopy [J].
Betti, MG ;
Corradini, V ;
De Renzi, V ;
Mariani, C ;
Casarini, C ;
Casarini, P ;
Abramo, A .
SOLID STATE COMMUNICATIONS, 1999, 110 (12) :661-666
[2]   MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION [J].
BOHR, J ;
FEIDENHANSL, R ;
NIELSEN, M ;
TONEY, M ;
JOHNSON, RL ;
ROBINSON, IK .
PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1275-1278
[3]  
BUSCH GA, 1961, SOLID STATE PHYS, V11, P1
[4]   VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1984, 52 (21) :1911-1914
[5]   Structure and electronic states of the α-Sn(111)-(2x2) surface [J].
Eguchi, T ;
Nakamura, J ;
Osaka, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (02) :381-384
[6]   GRAY TIN SINGLE CRYSTALS [J].
EWALD, AW ;
TUFTE, ON .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1007-1009
[7]   THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY [J].
FARROW, RFC ;
ROBERTSON, DS ;
WILLIAMS, GM ;
CULLIS, AG ;
JONES, GR ;
YOUNG, IM ;
DENNIS, PNJ .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :507-518
[8]   SURFACE BAND-STRUCTURE CALCULATION FOR GAAS(111)2X2 [J].
HENK, J ;
SCHATTKE, W .
SOLID STATE COMMUNICATIONS, 1989, 70 (06) :683-686
[9]   ANGLE-RESOLVED PHOTOEMISSION OF ALPHA-SN(111) AND THE POLAR (111) AND (111BAR) SURFACES OF INSB [J].
HERNANDEZCALDERON, I ;
HOCHST, H .
SURFACE SCIENCE, 1985, 152 (APR) :1035-1041
[10]   ANGLE RESOLVED ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY STUDY OF THE ELECTRONIC-STRUCTURE OF INSB(111) SURFACES ALONG THE [110] AZIMUTH [J].
HERNANDEZCALDERON, I ;
HOCHST, H ;
MAZUR, A ;
POLLMANN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2042-2045
123