Evaluation of the external electric- and magnetic field-driven Mathieu quantum dot's optical observables

被引:6
作者
Baser, P. [1 ]
Bahar, M. K. [1 ]
机构
[1] Sivas Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey
关键词
Nonlinear optical properties; Quantum dot; Mathieu potential; Electric field; Magnetic field; ABSORPTION; WELL; ELECTROABSORPTION; GENERATION; EFFICIENT; STATES; GAAS; BAND;
D O I
10.1016/j.physb.2022.413991
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this study, for the first time, the total refractive index changes (TRICs) and total absorption coefficients (TACs) of the quantum dot including the Mathieu potential confinement formed by the InxGa1-xAs/GaAs heterostructure under the influence of external electric and magnetic fields are theoretically investigated. The spectra and eigenfunctions of the Mathieu quantum dot are obtained using the effective mass approximation by forming a tridiagonal matrix formalism. The iterative method and compact-density-matrix formalism are used together to examine the nonlinear optical properties of the Mathieu quantum dot. Throughout the study, the effects on the TRICs and TACs of the external electric and magnetic field, as well as the In concentration and confinement width, are probed. Considering the strong and weak regimes of the external electric and magnetic fields, their alternatives to the structural parameters in terms of optical properties are also evaluated. The increment of the In concentration causes the quantum dot encompassment to turn into the opposite character after a certain radial distance. This result may be remarkable in terms of experimental applications. Under certain conditions, the incident optical intensities photons on the structure are determined at the limit values. As well as determining the functional range of the Mathieu quantum dot in terms of the TRICs and TACs characters, using both structure parameters and external fields and as a function of the incident photon energy, the determination of the optimum for these characters is an important theoretical gain in terms of providing a prediction for experimental studies.
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页数:8
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共 51 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[3]   SCATTERING BY SINGULAR POTENTIALS WITH A PERTURBATION - THEORETICAL INTRODUCTION TO MATHIEU FUNCTIONS [J].
ALY, HH ;
MULLERKIRSTEN, HJW ;
VAHEDIFARIDI, N .
JOURNAL OF MATHEMATICAL PHYSICS, 1975, 16 (04) :961-970
[4]   Quantum dot infrared photodetectors: Interdot coupling [J].
Apalkov, Vadim .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)
[5]   ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD [J].
AUSTIN, EJ ;
JAROS, M .
PHYSICAL REVIEW B, 1985, 31 (08) :5569-5572
[6]   Theoretical analysis of influence of random alloy fluctuations on the optoelectronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots [J].
Benchamekh, R. ;
Schulz, S. ;
O'Reilly, E. P. .
PHYSICAL REVIEW B, 2016, 94 (12)
[7]   Quantum dot opto-electronic devices [J].
Bhattacharya, P ;
Ghosh, S ;
Stiff-Roberts, AD .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2004, 34 :1-40
[8]  
Boyd RW., 2020, Nonlinear optics, V4
[9]   High-performance crosslinked colloidal quantum-dot light-emitting diodes [J].
Cho, Kyung-Sang ;
Lee, Eun Kyung ;
Joo, Won-Jae ;
Jang, Eunjoo ;
Kim, Tae-Ho ;
Lee, Sang Jin ;
Kwon, Soon-Jae ;
Han, Jai Yong ;
Kim, Byung-Ki ;
Choi, Byoung Lyong ;
Kim, Jong Min .
NATURE PHOTONICS, 2009, 3 (06) :341-345
[10]  
Datta BN, 2010, NUMERICAL LINEAR ALGEBRA AND APPLICATIONS, SECOND EDITION, P1, DOI 10.1137/1.9780898717655