Microstructural and thermal property evolution of reaction bonded silicon carbide (RBSC)

被引：22

作者：

Zhang, Yuying ^{[1
]}

Hsu, Chun-Yen ^{[1
]}

Aubuchon, Steven ^{[1
,2
]}

Karandikar, Prashant ^{[1
,3
]}

Ni, Chaoying ^{[1
]}

机构：

[1] Univ Delaware, Mat Sci & Engn, Newark, DE 19716 USA

[2] TA Instruments, 159 Lukens Dr, New Castle, DE 19720 USA

[3] M Cubed Technol Inc, 1 Tralee Ind Pk, Newark, DE 19711 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 764卷

关键词：

Reaction bonding; SiC; Thermal conductivity; Phase transformation; Annealing; In-situ TEM; AMORPHOUS-SILICON; HIGH-TEMPERATURES; CONDUCTIVITY; EXPANSION; CERAMICS; CRYSTALS;

D O I：

10.1016/j.jallcom.2018.05.321

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Temperature dependent thermal conductivity of reaction bonded silicon carbide (RBSC) from 300 K to 1073 K is evaluated. The thermal conductivity of 80 vol% and 90 vol% SiC RBSC is measured to be 185.7 W/m . K and 211.4 W/m . K at room temperature and decreases to 51.46 W/m . K and 55.77 W/m . K at 1073 K, respectively. Thermal transport behavior of RBSC at elevated temperatures suggests that a structural mechanism plausibly associated with phase transformation occurs in the composite system. TEM in-situ heating test is employed to investigate the RBSC phase evolution. Results indicate the existence of minor Si amorphous phase near SiC/Si interface, and the amorphous Si phase transformation to crystalline Si could start at a relatively low temperature. The Si phase transformation improves the thermal transport performance of the RBSC system. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：107 / 111

页数：5

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