Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

被引：15

作者：

Simoes, AZ

Gonzalez, AHM

Riccardi, CS

Souza, EC

Moura, F

Zaghete, MA

Longo, E

Varela, JA ^{[1
]}

机构：

[1] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil

[2] Univ Fed Sao Carlos, UFSCar, Dept Chem, BR-13565905 Sao Carlos, SP, Brazil

来源：

JOURNAL OF ELECTROCERAMICS | 2004年 / 13卷 / 1-3期

关键词：

bismuth lanthanum titanate; FERAM; thin film;

D O I：

10.1007/s10832-004-5077-z

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2P(r) = 41.4 muC/cm(2) and V-c = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.

引用

页码：65 / 70

页数：6

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