Electroluminescence from silicon p-n junctions prepared by wafer bonding

被引：0

作者：

Sveinbjornsson, EO ^{[1
]}

Bengtsson, S ^{[1
]}

Weber, J ^{[1
]}

Keskitalo, N ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Solid State Elect, S-41296 Gothenburg, Sweden

来源：

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV | 1998年 / 36卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal.

引用

页码：264 / 271

页数：8