Ultra Wide-Band, High-Power, High-Efficiency GaN Amplifier

被引：0

作者：

Ezzeddine, Amin ^{[1
]}

Hung, Alfred ^{[2
]}

Viveiros, Ed ^{[2
]}

Huang, Ho-Chung ^{[1
]}

机构：

[1] AMCOM Commun Inc, 401 Profess Dr, Gaithersburg, MD 20879 USA

[2] US Army Res Lab, Adelphi, MD USA

来源：

2013 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS) | 2013年

关键词：

Broadband amplifiers; high-voltage techniques; microwave devices; power combiners; MMICs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.

引用

页数：4