Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction

被引：29
作者：
Ayhan, Muhammed Emre [1 ]
Shinde, Mandar [2 ]
Todankar, Bhagyashri [2 ]
Desai, Pradeep [2 ]
Ranade, Ajinkya K. [2 ]
Tanemura, Masaki [2 ]
Kalita, Golap [2 ,3 ]
机构：
[1] Necmettin Erbakan Univ, Dept Met & Mat Engn, Konya, Turkey
[2] Nagoya Inst Technol, Dept Phys Sci & Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Frontier Res Inst Mat Sci, Nagoya, Aichi, Japan
来源：
MATERIALS LETTERS | 2020年 / 262卷
基金：
日本学术振兴会;
关键词：
Beta-gallium oxide; Copper iodide; Electrical properties; Photovoltaic action; Semiconductors; Solar-blind radiation; SOLAR-BLIND PHOTODETECTOR; BETA-GA2O3; GA2O3; FILM;
D O I：
10.1016/j.matlet.2019.127074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the fabrication of gamma-phase copper iodide (gamma-Cul) and beta-gallium oxide (beta-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline gamma-Cul with predominant (1 1 1) plane orientation was deposited on the beta-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the gamma-Cul/gamma-Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the gamma-Cul layer. The UV irradiation-induced photovoltaic action in the gamma-Cul/beta-Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications. (C) 2019 Elsevier B.V. All rights reserved.
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页数：5
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