Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction

被引：29

作者：

Ayhan, Muhammed Emre ^{[1
]}

Shinde, Mandar ^{[2
]}

Todankar, Bhagyashri ^{[2
]}

Desai, Pradeep ^{[2
]}

Ranade, Ajinkya K. ^{[2
]}

Tanemura, Masaki ^{[2
]}

Kalita, Golap ^{[2
,3
]}

机构：

[1] Necmettin Erbakan Univ, Dept Met & Mat Engn, Konya, Turkey

[2] Nagoya Inst Technol, Dept Phys Sci & Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan

[3] Nagoya Inst Technol, Frontier Res Inst Mat Sci, Nagoya, Aichi, Japan

来源：

MATERIALS LETTERS | 2020年 / 262卷

基金：

日本学术振兴会;

关键词：

Beta-gallium oxide; Copper iodide; Electrical properties; Photovoltaic action; Semiconductors; Solar-blind radiation; SOLAR-BLIND PHOTODETECTOR; BETA-GA2O3; GA2O3; FILM;

D O I：

10.1016/j.matlet.2019.127074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the fabrication of gamma-phase copper iodide (gamma-Cul) and beta-gallium oxide (beta-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline gamma-Cul with predominant (1 1 1) plane orientation was deposited on the beta-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the gamma-Cul/gamma-Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the gamma-Cul layer. The UV irradiation-induced photovoltaic action in the gamma-Cul/beta-Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：5

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