Inclined ZnO thin films produced by pulsed-laser deposition

被引：23

作者：

Peruzzi, M ^{[1
]}

Pedarnig, JD ^{[1
]}

Bäuerle, D ^{[1
]}

Schwinger, W ^{[1
]}

Schäffler, F ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 08期

关键词：

D O I：

10.1007/s00339-004-2953-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films with a uniformly inclined structure are grown by pulsed-laser deposition on SrTiO3. The c-axis of ZnO films is inclined by an angle theta = 20 +/- 0.5degrees and theta = 42 +/- 0.5degrees against the surface normal of 25degrees miscut (100) SrTiO3 and (110) SrTiO3 single crystal substrates, respectively. The inclined structure is due to epitaxial growth of hexagonal ZnO on cubic SrTiO3 as evidenced by X-ray diffraction and high-resolution transmission electron microscopy investigations. The range of deposition parameters (substrate temperature, oxygen background pressure) to achieve epitaxial growth is determined. The inclined films are smooth with an rms surface roughness of similar to 1.5 nm for layer thicknesses up to 700 nm.

引用

页码：1873 / 1877

页数：5

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