n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

被引：24

作者：

Lugani, L. ^{[1
]}

Malinverni, M. ^{[1
]}

Tirelli, S. ^{[2
]}

Marti, D. ^{[2
]}

Giraud, E. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Bolognesi, C. R. ^{[2
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, ICMP, CH-1015 Lausanne, Switzerland

[2] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

基金：

瑞士国家科学基金会;

关键词：

GAN; NH3;

D O I：

10.1063/1.4902347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 x 10(-4) Omega.cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n(+)-GaN/2 dimensional electron gas contact resistivity of 0.11 Omega.mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices. (C) 2014 AIP Publishing LLC.

引用

页数：3

共 11 条

[1] Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
Faria, Faiza Afroz
Guo, Jia
Zhao, Pei
Li, Guowang
Kandaswamy, Prem Kumar
Wistey, Mark
Xing, Huili
Jena, Debdeep
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (03)
[2] High Si and Ge n-type doping of GaN doping - Limits and impact on stress
Fritze, S.
Dadgar, A.
Witte, H.
Buegler, M.
Rohrbeck, A.
Blaesing, J.
Hoffmann, A.
Krost, A.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (12)
[3] High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
Gonschorek, M.
Carlin, J-F.
Feltin, E.
Py, M. A.
Grandjean, N.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (06)
[4] Molecular beam epitaxy of GaN under N-rich conditions using NH3
Grandjean, N
Leroux, M
Massies, J
Mesrine, M
Laugt, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A): : 618 - 621
[5] MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω . mm
Guo, Jia
Li, Guowang
Faria, Faiza
Cao, Yu
Wang, Ronghua
Verma, Jai
Gao, Xiang
Guo, Shiping
Beam, Edward
Ketterson, Andrew
Schuette, Michael
Saunier, Paul
Wistey, Mark
Jena, Debdeep
Xing, Huili
[J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 525 - 527
[6] Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates
Kandaswamy, P. K.
Machhadani, H.
Kotsar, Y.
Sakr, S.
Das, A.
Tchernycheva, M.
Rapenne, L.
Sarigiannidou, E.
Julien, F. H.
Monroy, E.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (14)
[7] High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
Kyle, Erin C. H.
Kaun, Stephen W.
Burke, Peter G.
Wu, Feng
Wu, Yuh-Renn
Speck, James S.
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (19)
[8] Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
Mesrine, M
Grandjean, N
Massies, J
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (03) : 350 - 352
[9] Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax >300 GHz
Schuette, Michael L.
Ketterson, Andrew
Song, Bo
Beam, Edward
Chou, Tso-Min
Pilla, Manyam
Tserng, Hua-Quen
Gao, Xiang
Guo, Shiping
Fay, Patrick J.
Xing, Huili Grace
Saunier, Paul
[J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) : 741 - 743
[10] Shinohara K., 2010, ELECT DEVICES MEET I, P672

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