Characterization of silicon wafer bonding for power MEMS applications

被引：27
作者：
Ayón, AA
Zhang, X [1 ]
Turner, KT
Choi, DW
Miller, B
Nagle, SF
Spearing, SM
机构：
[1] Boston Univ, Dept Mfg Engn, Boston, MA 02215 USA
[2] Sony Semicond, San Antonio, TX 78245 USA
[3] Boston Univ, Fraunhofer USA Ctr Mfg Innovat, Boston, MA 02215 USA
[4] MIT, Gas Turbine Lab, Cambridge, MA 02139 USA
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 103卷 / 1-2期
关键词：
low temperature; wafer bonding; power MEMS;
D O I：
10.1016/S0924-4247(02)00329-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 degreesC was characterized. The silicon-silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending-delamination technique. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1 / 8
页数：8
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