Fabrication process of a coaxial plasmonic metamaterial

被引:7
作者
van de Haar, Marie Anne [1 ]
Polman, Albert [1 ]
机构
[1] FOM Inst AMOLF, Ctr Nanophoton, Sci Pk 104, NL-1098 XG Amsterdam, Netherlands
来源
OPTICAL MATERIALS EXPRESS | 2016年 / 6卷 / 03期
关键词
NEGATIVE-INDEX METAMATERIAL; HYDROGEN SILSESQUIOXANE; EXPERIMENTAL REALIZATION; REFRACTIVE-INDEX; SILICON; CONTRAST; TEMPERATURE; SENSITIVITY; RESIST; TIME;
D O I
10.1364/OME.6.000884
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report, in full detail, the experimental fabrication process of a coaxial plasmonic metamaterial which is designed to operate in the UV/visible part of the spectrum. The metamaterial consists of ultra-thin wall (13-15 nm) dielectric (Si or HSQ) coaxial cylinders with a well defined diameter (> 100 nm) embedded in silver or gold. We demonstrate the fabrication process on both a SiO2 and Si substrate, where fabrication on a 1 mu m thick Si membrane results in nearly freestanding structures. The process starts with creating an HSQ etch mask, using electron beam lithography. The structures are then transferred into the substrate with reactive ion etching, followed by metal infilling using a newly developed physical vapor deposition technique. Finally, the metamaterial surface is polished and made optically accessible with focused ion beam milling under grazing angles. (C) 2016 Optical Society of America
引用
收藏
页码:884 / 911
页数:28
相关论文
共 35 条
[1]   Sidewall passivation assisted by a silicon coverplate during Cl2-H2 and HBr inductively coupled plasma etching of InP for photonic devices [J].
Bouchoule, S. ;
Patriarche, G. ;
Guilet, S. ;
Gatilova, L. ;
Largeau, L. ;
Chabert, P. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (02) :666-674
[2]  
Burgos SP, 2010, NAT MATER, V9, P407, DOI [10.1038/nmat2747, 10.1038/NMAT2747]
[3]   Effects of developing conditions on the contrast and sensitivity of hydrogen silsesquioxane [J].
Chen, Yifang ;
Yang, Haifang ;
Cui, Zheng .
MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) :1119-1123
[4]   Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication [J].
Choi, Sookyung ;
Jin, Niu ;
Kumar, Vipan ;
Adesida, Ilesanmi ;
Shannon, Mark .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06) :2085-2088
[5]   Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist [J].
Clark, Nathaniel ;
Vanderslice, Amy ;
Grove, Robert, III ;
Krchnavek, Robert R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06) :3073-3076
[6]  
Cui Z., 2008, NANOFABRICATION PRIN, DOI DOI 10.1007/978-3-319-39361-2
[7]   PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J].
DAGOSTINO, R ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :162-167
[8]   Negative refractive index in coaxial plasmon waveguides [J].
de Waele, Rene ;
Burgos, Stanley P. ;
Atwater, Harry A. ;
Polman, Albert .
OPTICS EXPRESS, 2010, 18 (12) :12770-12778
[9]   Are negative index materials achievable with surface plasmon waveguides? A case study of three plasmonic geometries [J].
Dionne, Jennifer A. ;
Verhagen, Ewold ;
Polman, Albert ;
Atwater, Harry A. .
OPTICS EXPRESS, 2008, 16 (23) :19001-19017
[10]   Negative-index metamaterial at 780 nm wavelength [J].
Dolling, G. ;
Wegener, M. ;
Soukoulis, C. M. ;
Linden, S. .
OPTICS LETTERS, 2007, 32 (01) :53-55