Well-Aligned Hydrothermally Synthesized Zinc Oxide Nanorods on p-GaN without a Seed Layer

被引：0

作者：

Caruso, Fulvio ^{[1
]}

Mosca, Mauro ^{[1
]}

Macaluso, Roberto ^{[1
]}

Cali, Claudio ^{[1
]}

Feltin, Eric ^{[2
]}

机构：

[1] Univ Palermo, Dipartimento Energia Ingn Informaz & Modelli Mate, Palermo, Italy

[2] Novagan Sarl, Lausanne, Switzerland

来源：

2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2015年

关键词：

Zinc oxide; nanorods; Nanofabrication; Characterization; p-GaN; hydrothermal growth; seed layer; ZNO; GROWTH; NANOWIRES; NANOSTRUCTURES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on p-doped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.

引用

页码：1012 / 1014

页数：3

共 12 条

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