XRD characterization of the 6H-SiC single crystal grown from Si-C-Ti ternary solution

被引:5
作者
Yashiro, Nobuyoshi [1 ]
Kusunoki, Kazuhiko [1 ]
Kamei, Kazuhito [1 ]
Yauchi, Akihiro [1 ]
机构
[1] Sumitomo Met Ind Ltd, Corp Res & Dev Labs, Amagasaki, Hyogo 6600891, Japan
来源
Silicon Carbide and Related Materials 2006 | 2007年 / 556-557卷
关键词
solution growth; 6H-SiC; X-ray topography; rocking curve; reciprocal-lattice map;
D O I
10.4028/www.scientific.net/MSF.556-557.303
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as omega-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the omega-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.
引用
收藏
页码:303 / 306
页数:4
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