Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

被引：4

作者：

Ahmad, S. ^{[1
]}

Ibrahim, A. ^{[1
]}

Alias, R. ^{[1
]}

Shapee, S. M. ^{[1
]}

Ambak, Z. ^{[1
]}

Zakaria, S. Z. ^{[1
]}

Yahya, M. R. ^{[1
]}

Mat, A. F. A. ^{[1
]}

机构：

[1] TM Res & Dev Sdn Bhd, TMR&D Innovat Ctr, Microelect & Nanotechnol Program, Cyberjaya 63000, Selangor, Malaysia

来源：

INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007 | 2010年 / 1217卷

关键词：

Al(2)O(3); thermal conductivity; thermal diffusivity; flash method; dielectric constant;

D O I：

10.1063/1.3377863

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1mm thickness were sintered at 1100 degrees C, 1300 degrees C and 1500 degrees C for about 20 hours using heating and cooling rates of 2 degrees C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

引用

页码：442 / 446

页数：5

共 10 条

[1] Thermal diffusivity of polymers by the laser flash technique [J].