Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 degreesC-600 degreesC for 1 min in air, yielding specific contact resistances of similar to10(-4) Omega(.)cm(2). In addition, the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.