Nonpolar a-plane ZnO films fabricated on (302)γ-LiAlO2 by pulsed laser deposition

被引：27

作者：

Zhou, Shengming ^{[1
]}

Zhou, Jianhua

Huang, Taohua

Li, Shuzhi

Zou, Jun

Wang, Jun

Zhang, Xia

Li, Xiaomin

Zhang, Rong

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[3] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 02期

关键词：

atomic force microscopy; substrates; X-ray diffraction; laser epitaxy; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2007.01.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

引用

页码：510 / 514

页数：5

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