Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

被引：26

作者：

Lin, Tzu-Neng ^{[1
]}

Santiago, Svette Reina Merden ^{[1
]}

Yuan, Chi-Tsu ^{[1
]}

Chiu, Kuo-Pin ^{[1
]}

Shen, Ji-Lin ^{[1
]}

Wang, Ting-Chun ^{[2
]}

Kuo, Hao-Chung ^{[3
]}

Chiu, Ching-Hsueh ^{[4
]}

Yao, Yung-Chi ^{[5
]}

Lee, Ya-Ju ^{[5
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys & Ctr Nanotechnol, Chungli 32023, Taiwan

[2] Natl Cheng Kung Univ, Res Ctr Energy Technol & Strategy, Dept Photon, Tainan 701, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[4] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

[5] Natl Taiwan Normal Univ, Inst Elect Opt Sci & Technol, Taipei 116, Taiwan

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

关键词：

EFFICIENCY; EXCITATION; COMPOSITE; OXIDE; BLUE;

D O I：

10.1038/s41598-017-07483-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

引用

页数：9

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