Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

被引：1

作者：

Bouzaki, Mohammed Moustafa ^{[1
,2
,3
]}

Aillerie, Michel ^{[2
,3
]}

Hamady, Sidi Ould Saad ^{[2
,3
]}

Chadel, Meriem ^{[1
,2
,3
]}

Benyoucef, Boumediene ^{[1
]}

机构：

[1] Univ Tlemcen, URMER, Chetouane 13000, Algeria

[2] Univ Lorraine, LMOPS, EA 4423, F-57070 Metz, France

[3] Cent Supelec, LMOPS, F-57070 Metz, France

来源：

MATERIALS RESEARCH EXPRESS | 2016年 / 3卷 / 10期

关键词：

hetero-junction solar cell; layer thickness; dopant concentration; BSF layer; INTRINSIC THIN-LAYER; P-TYPE; SILICON PHOTOVOLTAICS; N-TYPE; EFFICIENCY; SI; HETEROJUNCTION; HIT; SIMULATION; TECHNOLOGY;

D O I：

10.1088/2053-1591/3/10/105502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Weanalyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 mu m which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

引用

页数：12

共 34 条

[1] BAND-GAP NARROWING DUE TO MANY-BODY EFFECTS IN SILICON AND GALLIUM-ARSENIDE [J].

ABRAM, RA ;

CHILDS, GN ;

SAUNDERSON, PA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6105-6125

[2] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[3] Insertion of a thin highly doped crystalline layer in silicon heterojunction solar cells: Simulation and perspectives towards a highly efficient cell concept [J].

Carrere, T. ;

Varache, R. ;

Munoz, D. ;

Kleider, J. P. .

JOURNAL OF RENEWABLE AND SUSTAINABLE ENERGY, 2015, 7 (01)

[4] Electronic transitions at defect states in Cz p-type silicon -: art. no. 162109 [J].

Castaldini, A ;

Cavalcoli, D ;

Cavallini, A ;

Binetti, S ;

Pizzini, S .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[5] Key issues for accurate simulation of a-Si:H/c-Si heterojunction solar cells [J].

Coignus, J. ;

Baudrit, M. ;

Singer, J. ;

Lachaume, R. ;

Munoz, D. ;

Thony, P. .

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :174-179

[6] P-type versus n-type silicon wafers: Prospects for high-efficiency commercial silicon solar cells [J].

Cotter, J. E. ;

Guo, J. H. ;

Cousins, P. J. ;

Abbott, M. D. ;

Chen, F. W. ;

Fisher, K. C. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (08) :1893-1901

[7] Insights gained from computer modeling of heterojunction with instrinsic thin layer "HIT" solar cells [J].

Datta, A. ;

Rahmouni, M. ;

Nath, M. ;

Boubekri, R. ;

Cabarrocas, P. Roca i ;

Chatterjee, P. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (09) :1457-1462

[8] Modelling multivalent defects in thin film solar cells [J].

Decock, Koen ;

Khelifi, Samira ;

Burgelman, Marc .

THIN SOLID FILMS, 2011, 519 (21) :7481-7484

[9] Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy [J].

Diederich, L ;

Küttel, O ;

Aebi, P ;

Schlapbach, L .

SURFACE SCIENCE, 1998, 418 (01) :219-239

[10] Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve ∼27% efficiency [J].

Dwivedi, Neeraj ;

Kumar, Sushil ;

Bisht, Atul ;

Patel, Kamlesh ;

Sudhakar, S. .

SOLAR ENERGY, 2013, 88 :31-41

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