GaInNAs/GaAs quantum well growth by chemical beam epitaxy

被引：33

作者：

Miyamoto, T ^{[1
]}

Takeuchi, K ^{[1
]}

Kageyama, T ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

GaInNAs; chemical beam epitaxy; quantum well; N radical;

D O I：

10.1143/JJAP.37.90

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This is the first report on chemical beam epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 mu m was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

引用

页码：90 / 91

页数：2

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