25-Gb/s Direct Modulation of Implant Confined Holey Vertical-Cavity Surface-Emitting Lasers

被引：14

作者：

Chen, Chen ^{[1
]}

Tian, Zhaobing ^{[1
]}

Choquette, Kent D. ^{[2
]}

Plant, David V. ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 07期

关键词：

High-speed modulation; optical interconnects; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs); BANDWIDTH; VCSELS;

D O I：

10.1109/LPT.2010.2040990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 25-Gb/s direct modulation of an 850-nm implant-confined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm(2). The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.

引用

页码：465 / 467

页数：3

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