The process of low stress silicon nitride and the application in the fabrication of MEMS device

被引：0

作者：

He, HT ^{[1
]}

Xu, YQ ^{[1
]}

Yang, YJ ^{[1
]}

机构：

[1] HSRI, Shijiazhuang 050051, Hebei Province, Peoples R China

来源：

FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2004年 / 5774卷

关键词：

stress; film; MEMS;

D O I：

10.1117/12.607907

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride (Si3N4) is an important thin film materials in the construction of micromachined devices that depend upon low stress thin films. This paper presents the methods to obtain desired low stress levels for use in micromachined devices. By analyzing the mechanism of the stress we developed the processes by LPCVD, to achieve the quality levels in the applications of MEMS. And the results of this process allowed us to form a low stress film for the fabrications of micro cantilevers, and the applications in the micro mirrors in the MOEMS. At last, the results of the MEMS devices is presented.

引用

页码：616 / 619

页数：4