Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

被引：2

作者：

Brunthaler, G ^{[1
]}

Dietl, T

Prinz, A

Sawicki, M

Jaroszynski, J

Glod, P

Schaffler, F

Bauer, G

Maude, DK

Portal, JC

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] CNRS, MPI, High Field Magnet Lab, F-38042 Grenoble, France

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 03期

基金：

奥地利科学基金会;

关键词：

disordered systems; quantum wells; electron-electron interaction; quantum localisation;

D O I：

10.1016/S0038-1098(98)00013-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：157 / 161

页数：5

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