Resistive oxygen sensors using cerium oxide thin films prepared by metal organic chemical vapor deposition and sputtering

被引：28

作者：

Izu, N ^{[1
]}

Murayama, N ^{[1
]}

Shin, W ^{[1
]}

Matsubara, I ^{[1
]}

Kanzaki, S ^{[1
]}

机构：

[1] AIST, Adv Mfg Res Inst, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 10期

关键词：

resistive oxygen gas sensor; ceria; metal organic chemical vapor deposition (MOCVD); sputtering; response time;

D O I：

10.1143/JJAP.43.6920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated oxygen sensors with thin films of single-phase cerium oxide prepared by metal organic chemical vapor deposition (MOCVD) and sputtering, and investigated the properties of both sensors. The response times of the thin films prepared by MOCVD and sputtering were about 9s when the films were heated to 888K for the first time. However, the response time increased each time, each sensor was heated to 1274K. The deterioration of the response time in this study seems to be related to increasing crystallite size. It was concluded that the thin film prepared by sputtering was suitable for oxygen sensors compared with that prepared by MOCVD.

引用

页码：6920 / 6924

页数：5

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