1/f noise characteristics of hydrogenated long-wavelength infrared HgCdTe photodiode

被引：4

作者：

Yang, KD ^{[1
]}

Lee, YS ^{[1
]}

Lee, HC ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 12B期

关键词：

HgCdTe; hydrogenation; passivation; 1/f noise; infrared transmission;

D O I：

10.1143/JJAP.43.L1617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1/f noise characteristics of hydrogenated HgCdTe photodiode have been investigated. The hydrogenated diodes have better 1/f noise characteristics than typical ion implanted or plasma-induced junction diodes. In order to investigate the origin of the noise reduction, infrared transmission of the HgCdTe was measured. The absorption edge shift and infrared transmission enhancement were observed in hydrogenated samples, which means that the hydrogenation can passivate point defects or residual impurities in HgCdTe. The carrier mobility increment and concentration reduction were also observed in hydrogenated HgCdTe.

引用

页码：L1617 / L1619

页数：3

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