Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

被引：0
|
作者：
Lin, Wei-Hsun [1 ]
Tseng, Chi-Che [2 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Lin, Shih-Yen [3 ,4 ,5 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 04期
关键词：
Quantum-dot infrared photodetectors (QDIPs); TEMPERATURE OPERATION;
D O I：
10.1109/LPT.2009.2037727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP.
引用
收藏
页码：227 / 229
页数：3
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