Off-diagonal impedance in amorphous wires and its application to linear magnetic sensors

被引:101
作者
Sandacci, S [1 ]
Makhnovskiy, D
Panina, L
Mohri, K
Honkura, Y
机构
[1] Univ Plymouth, Sch Comp Commun & Elect, Plymouth PL4 8AA, Devon, England
[2] Japan Sci & Technol Agcy, Tokyo 1028666, Japan
[3] Aichi Steel Corp, Aichi 4768666, Japan
关键词
diagonal impedance; ferromagnetic wire; linear sensing; magnetoimpedance sensor; magnetoimpedance tensor; off-diagonal impedance;
D O I
10.1109/TMAG.2004.835676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated the magnetic-field behavior of the off-diagonal impedance in Co-based amorphous wires under sinusoidal (50 MHz) and pulsed (5 ns rise time) current excitations. For comparison, we measured the field characteristics of the diagonal impedance as well. In general, when an alternating current is applied to a magnetic wire, the voltage signal is generated not only across the wire but also in a pickup coil wound on it. These voltages are related to the diagonal and off-diagonal impedances, respectively. We demonstrate that these impedances have a different behavior as functions of axial magnetic field: the diagonal impedance is symmetrical, whereas the off-diagonal one is antisymmetrical with a near-linear portion within a certain field interval. For the off-diagonal response, the do bias current is necessary to eliminate circular domains. In the case of the: sinusoidal excitation without a do bias current, the off-diagonal response is very small and irregular. In contrast, the pulsed excitation, combining both high- and low-frequency harmonics, produces the off-diagonal voltage response without additional biasing. This behavior is ideal for a practical sensor circuit design. We discuss the principles of operation of a linear magnetic sensor based on a complementary metal-oxide-semiconductor transistor circuit.
引用
收藏
页码:3505 / 3511
页数:7
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