An analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices

被引：30

作者：

Reggiani, S ^{[1
]}

Valdinoci, M ^{[1
]}

Colalongo, L ^{[1
]}

Rudan, M ^{[1
]}

Baccarani, G ^{[1
]}

机构：

[1] Univ Bologna, Dipartimento Elettron Informat & Sistemist, I-40136 Bologna, Italy

来源：

VLSI DESIGN | 2000年 / 10卷 / 04期

关键词：

semiconductor-device simulation; bulk mobility model; majority- and minority-carriers; temperature dependence;

D O I：

10.1155/2000/52147

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to CAD and suitable for implementation in device simulators. The effects of the electric field, temperature, and doping concentration are accounted for. In particular, the model unifies the descriptions of majority- and minority-carrier mobility and includes the full temperature dependence. The effects of a high longitudinal field are included in the conventional velocity-saturation form; the doping dependence is also incorporated in the latter. The model has been worked out starting from a preliminary investigation using a Boltzmann solver, and has been validated by a number of comparisons with published experiments on silicon.

引用

页码：467 / 483

页数：17

共 20 条

[1] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].