Orientation control and electrical properties of YBa2Cu3O7-δ deposited onto CeO2 buffer films by laser chemical vapor deposition using liquid source precursors

被引:4
作者
Zhao, Pei [1 ]
Ito, Akihiko [1 ]
Goto, Takashi [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
基金
日本学术振兴会;
关键词
Yttrium barium copper oxide; Cerium oxide; Crystalline orientation; Laser chemical vapor deposition; THICK-FILMS; GROWTH; MICROSTRUCTURE; SURFACES;
D O I
10.1016/j.tsf.2014.05.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CeO2 and YBa2Cu3O7-delta (YBCO) films were deposited onto multilayer-coated Hastelloy C276 tape by laser chemical vapor deposition using liquid source precursors. The effect of the thickness of the CeO2 buffer film grown at 720 K on the orientation and electrical properties of the YBCO has been investigated. The optimal thickness of the CeO2 layer was found to be 97 nm resulting in the highest critical temperature of 90 K and a critical current density of 0.6 MA cm(-2). The deposition rate of the YBCO films was approximately 7 mu m h(-1). (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:92 / 96
页数:5
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