Tunable photoluminescence and electroluminescence of size-controlled silicon nanocrystals in nanocrystalline-Si/SiO2 superlattices

被引:39
作者
Creazzo, Tim [1 ]
Redding, Brandon [1 ]
Marchena, Elton [1 ]
Murakowski, Janusz [1 ]
Prather, Dennis W. [1 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
关键词
Silicon nanocrystals; Photoluminescence; Electroluminescence; Si/SiO2; superlattices; SI/SIO2; SUPERLATTICES; LIGHT-EMISSION; POOLE-FRENKEL; QUANTUM DOTS; LUMINESCENCE;
D O I
10.1016/j.jlumin.2009.11.007
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present photoluminescence and electroluminescence of silicon nanocrystals deposited by plasma-enhanced chemical vapor deposition (PECVD) using nanocrystalline silicon/silicon dioxide (nc-Si/SiO2) superlattice approach. This approach allows LIS to tune the nanocrystal emission wavelength by varying the thickness of the Si layers. We fabricate light emitting devices (LEDs) with transparent indium tin oxide (ITO) contacts using these superlattice materials. The current-voltage characteristics of the LEDs are measured and compared to Frenkel-Poole and Fowler-Nordheim models for conduction. The EL properties of the superlattice material are Studied, and tuning, similar to that of the PL spectra, is shown for the EL spectra. Finally, we observe the Output power and calculate the quantum efficiency and power conversion efficiency for each of the devices. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:631 / 636
页数:6
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