Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering

被引：42

作者：

Gao, Peng ^{[1
]}

Xu, Jun ^{[1
]}

Piao, Yong ^{[1
]}

Ding, Wanyu ^{[1
]}

Wang, Dehe ^{[1
]}

Deng, Xinlu ^{[1
]}

Dong, Chuang ^{[1
]}

机构：

[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 9-11期

关键词：

silicon carbon nitride; ECR; magnetron sputtering;

D O I：

10.1016/j.surfcoat.2006.07.197

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon carbon nitride thin films were prepared by microwave ECR plasma enhanced unbalanced magnetron sputtering. Chemical structure, mechanical and optical properties of the films as a function of graphite target voltage has been studied. The chemical structure in the deposited film is investigated with Fourier transform infrared spectroscopy (FTIR). The Si-C-N bonds increased from 17.14% to 23.56% while the graphite target voltage changed from 450 V to 650 V The composition of SiCN thin films was analyzed by X-ray photoemission spectroscopy (XPS). The optical property was measured with UV-visible spectrophotometer. It was found that the transmittance of SiCN thin films decreases with the increasing carbon content; the optical gap value progressively decreases from 2.65 to 1.95 eV as the carbon content changes from 19.7% to 26.4%. The hardness of the thin films has been studied by nano-indentation, it increased with the graphite target voltage. The maximum hardness of the thin films reaches 25 GPa. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：5298 / 5301

页数：4

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