SiGe Composition and Thickness Effects on NBTI in Replacement Metal Gate/High-κ Technologies

被引：0

作者：

Srinivasan, P. ^{[1
]}

Fronheiser, J. ^{[1
]}

Akarvardar, K. ^{[1
]}

Kerber, A. ^{[1
]}

Edge, L. F. ^{[2
]}

Southwick, R. G., III ^{[2
]}

Cartier, E. ^{[2
]}

Kothari, H. ^{[3
]}

机构：

[1] Globalfoundries Inc, Santa Clara, CA 90505 USA

[2] IBM Corp, SRDC, Armonk, NY 10504 USA

[3] STMicroelectronics, Geneva, Switzerland

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

NBTI; high-kappa; replacement gate; SiGe; band offsets; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of NBTI on SiGe thickness and composition for epitaxially grown layers on (100) and (110) Si substrates is studied in detail. It is found that SiGe thickness has no significant impact on NBTI at lower Ge%. However, lower NBTI degradation was observed with increasing Ge%, even though the interface state densities (N-it) increase with respect to Si. This improved NBTI is due to band offset limited V-T, indicating that the improvement is substrate related rather than interface related. The physical mechanism is then discussed in terms of Ge%-induced variation in the band alignment.

引用

页数：6

共 47 条

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