347 nm ultraviolet electroluminescence from MgxZn1-xO-based light emitting devices

被引：25
作者：
Chen, Peiliang
Ma, Xiangyang
Li, Dongsheng
Zhang, Yuanyuan
Yang, Deren [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期
关键词：
D O I：
10.1063/1.2751106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
347 nm ultraviolet (UV) electroluminescence (EL) originated from the near-band-edge emission of MgxZn1-xO was realized on a MgxZn1-xO-based metal-insulator (SiO2)-semiconductor (MIS) structure on a silicon substrate. Compared with the EL performance of the MgxZn1-xO/n(+)-Si heterojunction, the MgxZn1-xO-based MIS structure exhibited much stronger and purer UV emission while much weaker visible emissions. This is ascribed to the carrier accumulation beneath the MgxZn1-xO/SiO2 interface as the MIS structure is under forward bias, which significantly increases the radiative interband recombination rate and therefore the UV emission from MgxZn1-xO.(c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 15 条
  • [1] Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films
    Bhattacharya, P
    Das, RR
    Katiyar, RS
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (10) : 2010 - 2012
  • [2] The study of composition non-uniformity in ternary MgxZn1-xO thin films
    Chen, J
    Shen, WZ
    Chen, NB
    Qiu, DJ
    Wu, HZ
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (30) : L475 - L482
  • [3] Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices
    Chen, Peiliang
    Ma, Xiangyang
    Yang, Deren
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [4] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films
    Choopun, S
    Vispute, RD
    Yang, W
    Sharma, RP
    Venkatesan, T
    Shen, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (09) : 1529 - 1531
  • [5] Fabrication and characterization of ZnxMg1-xO thin films by dc magnetron sputtering with a composite target of AZO and Mg
    Fang, GJ
    Li, DJ
    Zhao, XZ
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (02): : 361 - 368
  • [6] Variation of structural, electrical, and optical properties of Zn1-xMgxO thin films
    Kim, Jae Won
    Kang, Hong Seong
    Kim, Jong Hoon
    Lee, Sang Yeol
    Lee, Jung-Kun
    Nastasi, Michael
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
  • [7] UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering
    Lim, Jae-Hong
    Kang, Chang-Ku
    Kim, Kyoung-Kook
    Park, Il-Kyu
    Hwang, Dae-Kue
    Park, Seong-Ju
    [J]. ADVANCED MATERIALS, 2006, 18 (20) : 2720 - +
  • [8] Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers
    Makino, T
    Tamura, K
    Chia, CH
    Segawa, Y
    Kawasaki, M
    Ohtomo, A
    Koinuma, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (12) : 2172 - 2174
  • [9] Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells -: art. no. 024902
    Matsui, H
    Tabata, H
    Hasuike, N
    Harima, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)
  • [10] Preparation of Zn1-xMgxO films by radio frequency magnetron sputtering
    Minemoto, T
    Negami, T
    Nishiwaki, S
    Takakura, H
    Hamakawa, Y
    [J]. THIN SOLID FILMS, 2000, 372 (1-2) : 173 - 176
12