Reconfigurable Inline Phase-Change Switches for Broadband Applications

被引:0
|
作者
El-Hinnawy, N. [1 ,2 ]
Borodulin, P. [1 ,3 ]
Torpey, M. [1 ]
Kuss, F. [1 ]
Ezis, A. [1 ]
Paramesh, J. [2 ]
Bain, J. [2 ]
Schlesinger, T. E. [3 ]
Howell, R. S. [1 ]
Lee, M. J. [1 ]
Nichols, D. [1 ]
Young, R. M. [1 ]
机构
[1] Northrop Grumman Elect Syst, Linthicum, MD 21044 USA
[2] Carnegie Mellon Univ, Pittsburgh, PA 15232 USA
[3] Johns Hopkins Univ, Baltimore, MD 21218 USA
来源
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年
关键词
germanium telluride; GeTe; inline phase-change switch; IPCS; RF switch; reconfigurable; tunable filter;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a 10x increase in the figure-of-merit (FOM) for radio-frequency (RF) switches. An ON-state resistance of 0.9 Omega (0.027 Omega.mm) with an OFF-state capacitance and resistance of 14.1 fF and 30 k Omega, respectively, were measured. This results in a switch cutoff frequency (F-co) of 12.5 THz, with an OFF/ON resistance ratio of 10,000:1. Passive RF circuits have been built with these switches to compare their frequency performance to state-of-the-art technologies, as well as to demonstrate fine-grain reconfigurability in RF circuits. Further analysis of 8-port omni-directional IPCS switches used in a reconfigurable transceiver demonstrates less than 2dB degradation in gain and 1dB in noise figure when reconfiguring a single chip for 4 different receiver chain frequencies (S-band, X-band, Iridium, and CDL-Ku), demonstrating the feasibility of IPCS devices for low-power, broadband reconfigurable RF systems.
引用
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页数:4
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