A vertical-cavity P-i-N SiGe/Si photodetector for Si-based OEICs

被引：3
|
作者：
Morikawa, T
Sugiyama, M
Tatsumi, T
Sato, K
Tashiro, T
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a novel vertical-cavity P-i-N SiGe/Si photodetector built in a bonded Silicon-On-Insulator (SOI) substrate. A new hybrid time-sharing gas supply scheme for the vertical-cavity photodetector is developed. The vertical-cavity photodetector on a bonded SOI exhibits a high external quantum efficiency (eta(ext)) of 60% with a low dark current of 0.5 pA/mu m(2) and a high photoresponse of 7.8 Gbit/s at lambda=980 nm.
引用
收藏
页码：661 / 664
页数：4
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