The study of inorganic alignment technique and rework process on 65" LCoS RPTV

被引:0
|
作者
Huang, I-chen [1 ]
Wang, Jiun-ming [1 ]
Chen, Yu-hsien [1 ]
Lo, Yu-cheng [1 ]
Li, Huai-an [1 ]
机构
[1] Chunghwa Picture Tubes, Cent Res Inst, Tao Yuan 334, Taiwan
关键词
plasma etching; inorganic; alignment layer; rework; LCoS;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
There are evaporating angle, particle contamination and film uniformity issue in the inorganic alignment film manufacturing process. Rework technique of alignment film is the only solution to reuse wafer and ITO glass. Dry etching process is used because of its cheaper, simplicity and no detrimental matter to the environment. We used CHF3 reactive gas in reactive ion etching system. By controlling the etching parameter, inorganic alignment film can be removed on both the wafer and ITO glass. Inorganic deposition can be executed after removing of SiOx alignment film.
引用
收藏
页码:443 / 446
页数:4
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