Comparison of high power IGBTs and hard driven GTOs for high power inverters

被引：0

作者：

Bernet, S ^{[1
]}

Teichmann, R ^{[1
]}

Zuckerberger, A ^{[1
]}

Steimer, P ^{[1
]}

机构：

[1] ABB Corp Res, D-69003 Heidelberg, Germany

来源：

APEC '98 - THIRTEENTH ANNUAL APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper compares hard driven GTOs (IGCTs) and high power IGBT modules in a two level PWM inverter. The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14MVA inverter at switching frequencies of f(s)=250Hz/500Hz, The evaluation of device characteristics is the basis for a derivation of potential applications.

引用

页码：711 / 718

页数：8