The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

被引：21

作者：

Seo, Yujin ^{[1
]}

Lee, Tae In ^{[1
]}

Yoon, Chang Mo ^{[2
]}

Park, Bo-Eun ^{[2
]}

Hwang, Wan Sik ^{[3
]}

Kim, Hyungjun ^{[2
]}

Yu, Hyun-Yong ^{[4
]}

Cho, Byung Jin ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 305701, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[3] Korea Aerosp Univ, Dept Mat Engn, Goyang 412791, South Korea

[4] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

关键词：

Germanium; germanium oxide; metal-oxide-semiconductor (MOS) capacitor; yttrium oxide (Y2O3); THIN-FILMS; DEPOSITION; SUBSTRATE;

D O I：

10.1109/TED.2017.2710182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluated at different Y2O3 thicknesses and annealing conditions in detail. Experimental results show that a Y2O3 layer thickness of 1.0 nm is required to serve as a GeO2 passivation layerwhile retaining gate-stack performance at 400 C-o postdeposition annealing. However, at a higher annealing temperature of 500 C-o, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y2O3 passivation method for further scaled GeO2-based Ge gate stacks.

引用

页码：3303 / 3307

页数：5

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