Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

被引：5
作者：
Jun, Myungsim [1 ]
Jang, Moongyu
Kim, Yarkyeon
Choi, Cheljong
Kim, Taeyoub
Park, Byungchul
Lee, Seongjae
机构：
[1] Elect & Telecommun Res Inst, IT BT Grp, Nano Bio Elect Devices Team, Taejon 305350, South Korea
[2] Chungnam Natl Univ, Dept Nanosci & Technol, Taejon 305764, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 01期
关键词：
D O I：
10.1116/1.2406066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have developed a new equivalent circuit model to analyze the charging dynamics of the interface states in Schottky barrier diodes at reverse bias condition. Trap density and the capture/ emission times are extracted by incorporating the measured ac admittance of erbium silicide Schottky diode with the newly developed equivalent circuit model. The extracted trap density is 1.5 X 10(12) cm(-1) eV(-1) and the capture and emission transition times are 19 and 5.9 us, respectively. Trap density decreases to 6.1 X 10(9) cm(-2) eV(-1) after N-2 annealing. (c) 2007 American Vacuum Society.
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收藏
页码：82 / 85
页数：4
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