Luminescent Copper(I) Halides for Optoelectronic Applications

被引:30
作者
Yin, Jun [1 ]
Lei, Qiong [2 ]
Han, Yu [1 ]
Bakr, Osman M. [3 ]
Mohammed, Omar F. [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Adv Membranes & Porous Mat Ctr, KAUST Catalysis Ctr, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[2] King Abdullah Univ Sci & Technol, Adv Membranes & Porous Mat Ctr, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[3] King Abdullah Univ Sci & Technol, KAUST Catalysis Ctr, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 12期
关键词
copper halides; optoelectronic devices; photoluminescence; self-trapped excitons;
D O I
10.1002/pssr.202100138
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead-free copper(I) halides have been demonstrated to exhibit high photoluminescence quantum yields with high air and light stability, making them one of the most promising semiconductors for next-generation light-emitting diode devices. The low-dimensional structures and soft lattices of Cu(I) halides induce the formation of self-trapped excitons (STEs) to achieve broadband emissions with high quantum yields. Herein, the recent studies on the electronic and optical properties of Cu(I) halides (i.e., Cs3Cu2X5, CsCu2X3, and A(2)CuX(3), where A = K+ or Rb+, X = Cl-, Br-, or I-) are reviewed and particular emphasis is placed on the role of the dimensionality and the halide in governing the electronic and optical properties (e.g., emission color and photoluminescence efficiency) via STEs. Several optoelectronic applications of Cu(I) halides are also discussed. In the last section, perspectives and challenges for the future development of Cu(I) halides in both optoelectronic and photocatalytic applications are outlined.
引用
收藏
页数:9
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