Domain switching contribution to the ferroelectric, fatigue and piezoelectric properties of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 films

被引:34
作者
Chen, Jieyu [1 ,2 ]
Tang, Zhehong [1 ,2 ]
Tian, Ruonan [1 ,2 ]
Bai, Yulong [1 ,2 ]
Zhao, Shifeng [1 ,2 ]
Zhang, Hao [3 ]
机构
[1] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
[2] Inner Mongolia Univ, Inner Mongolia Key Lab Nanosci & Nanotechnol, Hohhot 010021, Peoples R China
[3] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
来源
RSC ADVANCES | 2016年 / 6卷 / 40期
基金
中国国家自然科学基金;
关键词
THIN-FILMS; DIELECTRIC-PROPERTIES; CERAMICS; SIZE; COEFFICIENTS; HYSTERESIS; TIP;
D O I
10.1039/c6ra04262g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Lead-free Bi-0.5(Na0.85K0.15)(0.5)TiO3 films have been prepared via a solution-gelation technique. The microstructure, domain structure, ferroelectric, fatigue and piezoelectric properties were investigated systematically. This shows that the films have a single-phase perovskite structure and show outstanding ferroelectric, fatigue and piezoelectric properties at room temperature. The maximum piezoelectric coefficient value of the films reaches approximately 158.94 pm V-1, which is comparable to that of polycrystalline lead-based films. Thus good ferroelectric, fatigue and piezoelectric properties are attributed to the well-defined electrical domain structure and its switching for Bi-0.5(Na0.85K0.15)(0.5)TiO3 films. The present results suggest that Bi-0.5(Na0.85K0.15)(0.5)TiO3 films can be used as a candidate for lead-free films in piezoelectric micro-electro-mechanical systems.
引用
收藏
页码:33834 / 33842
页数:9
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