Phosphites as precursors in atomic layer deposition thin film synthesis

被引：3

作者：

Kvamme, Kristian B. ^{[1
]}

Ruud, Amund ^{[1
]}

Weibye, Kristian ^{[1
]}

Sajavaara, Timo ^{[2
]}

Nilsen, Ola ^{[1
]}

机构：

[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Chem, POB 1033, N-0315 Oslo, Norway

[2] Univ Jyvaskyla, Dept Phys, POB 35, FIN-40014 Jyvaskyla, Finland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2021年 / 39卷 / 03期

关键词：

PHOSPHATE; ALUMINUM; GROWTH;

D O I：

10.1116/6.0000844

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure.

引用

页数：8

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