Shunt-protected single-electron tunneling circuits fabricated on a quartz wafer

被引：3

作者：

Lotkhov, Sergey V. ^{[1
]}

Camarota, Benedetta ^{[1
]}

Scherer, Hansjoerg ^{[1
]}

Weimann, Thomas ^{[1
]}

Hinze, Peter ^{[1
]}

Zorin, Alexander B. ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年

关键词：

Single-electron tunneling; low-permittivity substrates; electron charge; electron-beam lithography; ON-CHIP RESISTORS; PUMP;

D O I：

10.1109/NMDC.2009.5167530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We address fabrication challenges for the single-electron tunneling (SET) devices, based on ultrasmall junctions Al/AlOx/Al. Nanoscale SET components are known to be very fragile in respect to electrostatic breakdown, which turns out to be a critical problem for devices, fabricated on insulating substrates. For the breakdown prevention, we successfully realized on-chip silicon shunts, whose conductivity advantageously vanished at low temperatures, making possible undisturbed SET operation at T similar to 100 mK.

引用

页码：23 / 26

页数：4

共 50 条

[1] Simulation of single-electron tunneling circuits
Gerousis, CP
Goodnick, SM
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (01): : 113 - 126
[2] PROPERTIES OF SHUNT-PROTECTED TUNNELING DEVICES FOR THE ELECTRON COUNTING CAPACITANCE STANDARD (ECCS) EXPERIMENT AT PTB
Camarota, Benedetta
Lotkhov, Sergey V.
Scherer, Hansjoerg
Weimann, Thomas
Hinze, Peter
Zorin, Alexander
2010 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS CPEM, 2010, : 291 - 292
[3] Synchronization of coupled single-electron circuits based on nanoparticles and tunneling junctions
Cervera, Javier
Manzanares, Jose A.
Mafe, Salvador
JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
[4] Can single-electron integrated circuits and quantum computers be fabricated in silicon?
Tucker, JR
Shen, TC
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2000, 28 (06) : 553 - 562
[5] Single-electron tunneling devices
Hadley, P
LECTURES ON SUPERCONDUCTIVITY IN NETWORKS AND MESOSCOPIC SYSTEMS, 1998, (427): : 256 - 270
[6] Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits
1600, American Inst of Physics, Woodbury, NY, USA (76):
[7] SIMULATION OF SINGLE-ELECTRON CIRCUITS
ROSNER, W
HOFMANN, F
VOGELSANG, T
RISCH, L
MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 55 - 58
[8] Electron counting of single-electron tunneling current
Fujisawa, T
Hayashi, T
Hirayama, Y
Cheong, HD
Jeong, YH
APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2343 - 2345
[9] Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor
Boese, D
Schoeller, H
EUROPHYSICS LETTERS, 2001, 54 (05): : 668 - 674
[10] Irreversibility on the Level of Single-Electron Tunneling
Kueng, B.
Roessler, C.
Beck, M.
Marthaler, M.
Golubev, D. S.
Utsumi, Y.
Ihn, T.
Ensslin, K.
PHYSICAL REVIEW X, 2012, 2 (01):

← 1 2 3 4 5 →