Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

被引：1

作者：

Osinnykh, I. V. ^{[1
,2
]}

Malin, T. V. ^{[1
]}

Zhuravlev, K. S. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, 13 Lavrentieva Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, 2 Pirogova Str, Novosibirsk 630090, Russia

来源：

19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2018年 / 993卷

关键词：

SI; DONORS; GAN;

D O I：

10.1088/1742-6596/993/1/012006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGa1-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

引用

页数：6

共 19 条

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Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x &gt; 0.5

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5